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PTF 10053 12 Watts, 2.0 GHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 10053 is a 12-watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 12 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
* * * * *
Typical Output Power & Efficiency vs. Input Power
16 14 Efficiency 50 45 Efficiency (%) X 40 35 Output Power 8 6 30 25
Output Power (Watts)
12 10
A-1
100 2 3 4 53 569
911
VDD = 26 V
4 2 0 0.0 0.5 1.0 1.5 2.0
IDQ = 155 mA f = 2.0 GHz
20 15 10
Input Power (Watts)
Package 20244
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 26 V, POUT = 3 W, IDQ = 155 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 155 mA, f = 1.99 GHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 155 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 155 mA, f = 1.99 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB hD Y
Min
10 12 40 --
Typ
12 -- -- --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10053
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 50 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 0.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 58 0.33 -40 to +150 3.0
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
14
Broadband Test Fixture Performance
60 Gain (dB) 50 40 Efficiency (%)
Gain (dB) and Output Power (W)
16 15 14 13 12 11 10
Output Power (W)
55 50
12
Efficiency (%) X
40
Gain (dB)
Efficiency (%)
45
10 8 6 4 2 1925
VDD = 26 V IDQ = 155 mA
Gain (dB)
35 30 25 20 2050
IDQ = 155 mA Pout = 10 W
Return Loss
20 -10 -20 10 -30 0 2000
9 1750
1800
1850
1900
1950
2000
1950
1975
Frequency (MHz)
Frequency (MHz)
2
Return Loss (dB) X
VDD = 26 V
30 0
Efficiency (%)
e
Power Gain vs. Output Power
13 18
PTF 10053
Output Power vs. Supply Voltage
Output Power (Watts)
12
Power Gain (dB)
IDQ = 180 mA
11 10 9
16
IDQ = 90 mA IDQ = 45 mA
VDD = 26 V f = 2.0 GHz
1 10 100
14
12
8 7 0
IDQ = 155 mA f = 2.0 GHz
10 22 24 26 28 30
Output Power (Watts)
Supply Voltage (Volts)
3rd Order IMD vs. Output Power
-20 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 0
Capacitance vs. Supply Voltage
3.5 3.0
Cds and Cgs (pF)
-30
Cgs
VGS =0 V f = 1 MHz
2.0 1.5
IMD (dBc)
-40
VDD = 26 V IDQ = 155 mA f1 = 2000.0 MHz f2 = 2000.1 MHz
Cds
-50
Crss
10 20 30 40
1.0 0.5
-60
Output Power (Watts-PEP)
Supply Voltage (Volts)
1.03 1.02 1.01
Bias Voltage vs. Temperature
Voltage nomalized to 1.0 V Series show current (A)
Bias Voltage (V)
1.00 0.99 0.98 0.97 0.96 0.95 0.94 -20 0 20 40 60 80 100 0.075 0.5 0.925 0.2875 0.7125 1.1375
Temp. (C)
3
Crss (pF)
2.5
PTF 10053
Impedance Data
VDD = 26 V, POUT = 12 W, IDQ = 155 mA
D
e
Z Source Z Load
Z0 = 50 W
G S
Frequency
GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R
Z Source W
jX -4.0 -4.2 -4.4 -4.8 -5.0 -5.4 -5.8 R 3.3 3.5 3.7 3.9 3.3 3.1 3.3 2.70 2.60 2.50 2.30 2.25 2.20 2.20
Z Load W
jX -2.5 -2.9 -2.9 -2.7 -2.7 -2.9 -3.1
Typical Scattering Parameters
(VDS = 26 V, ID = 500 mA)
f (MHz)
100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200
S11 Mag
0.806 0.800 0.850 0.878 0.900 0.914 0.925 0.932 0.941 0.947 0.957 0.961 0.963 0.963 0.963 0.964 0.968 0.972 0.976 0.978 0.976 0.975
S21 Ang
-117 -127 -149 -158 -163 -168 -171 -174 -177 -180 178 176 173 171 170 168 166 165 163 161 159 157
S12 Ang
103 96 69 54 43 33 25 18 12 6 1 -4 -9 -14 -19 -23 -27 -31 -36 -40 -44 -48 4
S22 Ang
12 4 -15 -25 -31 -35 -31 -16 16 52 66 73 74 75 75 75 75 74 72 71 69 67
Mag
25.9 21.1 12.1 8.19 5.94 4.49 3.46 2.73 2.20 1.81 1.52 1.29 1.11 0.957 0.839 0.741 0.664 0.600 0.546 0.499 0.460 0.427
Mag
0.012 0.012 0.011 0.010 0.008 0.006 0.004 0.003 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.010 0.011 0.012 0.013 0.014 0.015
Mag
0.578 0.577 0.650 0.729 0.791 0.851 0.888 0.896 0.909 0.915 0.933 0.944 0.953 0.959 0.963 0.964 0.968 0.972 0.974 0.976 0.975 0.977
Ang
-80 -90 -113 -125 -134 -142 -150 -156 -160 -164 -167 -170 -173 -176 -178 179 177 175 173 171 169 167
e
Test Circuit
PTF 10053
Schematic for f = 1.990 GHz PTF 10053 RF Transistor 0.312 l 1.990 GHz Microstrip 46.6 W 0.161 l 1.990 GHz Microstrip 46.6 W 0.312 l 1.990 GHz Microstrip 46.6 W 0.248 l 1.990 GHz Microstrip 46.6 W 0.118 l 1.990 GHz Microstrip 9.42 W 0.177 l 1.990 GHz Microstrip 8.92 W 0.129 l 1.990 GHz Microstrip 46.6 W 0.312 l 1.990 GHz Microstrip 46.6 W C1 Capacitor, Variable, .3-3.5 pF JACO JMC5701 C2, C5, C6, C7, C8 Capacitor, 33 pF 100B 330 C3 Capacitor, 0.9 pF 100B R9 C4 Capacitor, 3.0 pF 100B 3R0 DUT
l1 l2 l3 l4 l5 l6 l7 l8
C9 C10 C11 J1, J2 L4 L2, L3 L1 R1, R2 Circuit Board
Capacitor, 0.1 F Digi-Key P4525-ND Capacitor, 1.7 pF 100B 2R0 Capacitor, 10 F, 35V Digi-Key PCS6106-ND Connector, SMA, Female, Panel Mount Ericsson, #RPM 513 412/53 Ferrite, 6 mm Phillips 53/3/4.6-452 4 Turns, 22 AWG, .120 DIA I.D. Inductor, 22 AWG Buss Wire Resistor, 220 W, 1/4W Digi-Key 220QBK-ND TMM4, .030" Dielectric Thickness, 2 oz. copper, er = 4.5, Rogers
Assembly Diagram (not to scale) 5
PTF 10053
e
Artwork (not to scale)
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1998, 2000 Ericsson Inc. EUS/KR 1522-PTF 10053 Uen Rev. B 12-13-00
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